A Prospect of Grain Boundary Engineering for Electronic Properties in Polycrystalline Materials
Ludmila Fionova, Tadao Watanabe, Yulii Lisovski
pp. 613-623
Abstract
Recent studies of electronic properties of individual grain boundaries (GBs) have been reviewed in relation to the character and structure of GBs in metals, semiconductors and superconducting materials. The effects of grain assemblage and cooparative phenomena in GB ensemble on electrical and magnetic properties have been also discussed. Using these results as a base, possible ways for GB design and control and prospective of GB engineering are given.